Semiconductor device and method for manufacturing the same

ABSTRACT

The semiconductor device  100  comprises a first semiconductor element  113  provided on a face on one side of a flat plate shaped interconnect component  101 , an insulating resin  119  covering a face of a side where the first semiconductor element  113  of the interconnect component  101  is provided and a side face of the first semiconductor element  113 , and a second semiconductor element  111  provided on a face on the other side of the interconnect component  101 . The interconnect component  101  has a constitution where an interconnect layer  103 , a silicon layer  105  and an insulating film  107  are sequentially formed. The interconnect layer  103  has a constitution where the interconnect layer  103  has a flat plate shaped insulating component and a conductive component extending through the insulating component. The first semiconductor element  113  is electrically connected with the second semiconductor element  111  through the conductive component.

This application is based on Japanese patent application NO.2004-194690, the content of which is incorporated hereinto by reference.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a semiconductor device and a method formanufacturing the same.

2. Related Art

As for a conventional semiconductor device, the Japanese Laid-OpenPatent Publication No. 2001-345418 discloses the conventionalsemiconductor device. The Japanese Laid-Open Patent Publication No.2001-345418 discloses a both-side mounting structure component in whichthe semiconductor device is provided on both faces of a circuit boardusing a flip chip mounting. According to the Japanese Laid-Open PatentPublication No. 2001-345418, improvement of a manufacturing yield andreliability may be made possible upon adjusting a glass transitiontemperature of a sealing resin sealing the semiconductor device aftermounting.

SUMMARY OF THE INVENTION

However, it has now been discovered that, in the conventional techniquedescribed in the Japanese Laid-Open Patent Publication No. 2001-345418,there is fear that bonding accuracy or quality deteriorates caused bydifference of a thermal expansion coefficient between the substrate andbase material of the semiconductor element. For this reason, theconnection of a fine interconnect to the semiconductor element isdifficult. Furthermore, also there is room for improvement in connectingreliability. Therefore, it is difficult to realize a large-scaleinter-chip connection with high interconnect density.

According to the present invention, there is provided a semiconductordevice comprising an interconnect component in a shape of a flat plate,a first semiconductor element provided on a face on one side of theinterconnect component, a sealing resin covering the face on one sideand a side face of the first semiconductor element, and a secondsemiconductor element provided on a face on the other side of theinterconnect component, wherein the interconnect component is providedwith an interconnect layer, a support layer supporting the interconnectlayer, and a through electrode, which extends through the support layer,connecting with the interconnect layer; and wherein the firstsemiconductor element is electrically connected with the secondsemiconductor element through the interconnect component.

The semiconductor device of the present invention is provided with theinterconnect layer, the support layer supporting the interconnect layer,and the through electrode, which extends through the support layer,connects with the interconnect layer; therefore, in the semiconductordevice, it is possible to arrange the through electrode with highdensity. Further, since the semiconductor device has a support layer, itis possible to enhance connecting reliability between the semiconductorelement and the through electrode when providing the through electrodewith high density. Consequently, it is possible to realize connection ofa plurality of chips or large scale inter-chip connection.

In the present invention, the semiconductor device may have aconfiguration in which the interconnect layer and the support layer aresequentially formed. Further, the semiconductor device may have aconfiguration in which the through electrode is constituted of aplurality of conductive components.

In the semiconductor device of the present invention, a linear expansioncoefficient of the material of the support layer may not be less than0.5 ppm/degree C. to not more than 5 ppm/degree C. Having suchconfiguration, it is possible to further enhance connecting reliabilitybetween the first semiconductor element and the second semiconductorelement.

In the semiconductor device of the present invention, the support layermay be a silicon layer. A fine interconnect component is formed on thesilicon layer with high rigidity, followed by connecting the supportlayer with the silicon semiconductor element having the same thermalexpansion coefficient as the support layer, so that connection with highaccuracy and high reliability can be presented.

In the semiconductor device of the present invention, an active elementsuch as a transistor or the like may be formed in the support layer.

In the semiconductor device of the present invention, the interconnectcomponent may have a configuration in which an insulating film, thesupport layer and the interconnect layer are sequentially formed; andthe first semiconductor element may be connected with the interconnectlayer, and the second semiconductor element may be connected with theinsulating film. Having such configuration, it is possible to insulatesurely a face of the semiconductor element, and it is possible tosufficiently secure connecting reliability of mutual semiconductorelements. In the present invention, the semiconductor device may have aconfiguration in which mutual semiconductor elements are electricallyconnected with each other through the through electrode extendingthrough the silicon layer and the insulating film, and the interconnectlayer.

According to the present invention, there is provided a semiconductordevice comprising an interconnect component in a shape of flat plate, afirst semiconductor element provided on a face on one side of theinterconnect component, a sealing resin covering the face on one sideand a side face of the first semiconductor element, and a secondsemiconductor element provided on a face on the other side of theinterconnect component, wherein the interconnect component is providedwith an interconnect layer having a flat plate shaped insulatingcomponent, and a conductive component extending through the insulatingcomponent, and the first semiconductor element is electrically connectedwith the second semiconductor element through the conductive component.

In the semiconductor device of the present invention, the conductivecomponent extends through a flat plate shaped insulating component. Forthis reason, it is possible to realize the narrowing of the intervals ofthe conductive component. Consequently, it is possible to arrange theconductive component, which connects the first semiconductor elementwith the second semiconductor element, with high density.

In the present invention, the conductive component extending through theinsulating component may be constituted of a continuous one component,or may be configuration in which a plurality of conductive componentsare bonded so that electrical connection is secured. For instance, oneconductive component may be configuration composed of one conductiveplug. Further, the semiconductor device may have a configuration inwhich the interconnect layer is a multi-layered interconnect, and theconductive component is connected with the interconnect and a pluginside the interconnect layer.

In the semiconductor device of the present invention, the semiconductordevice may have a configuration in which the conductive componentincludes a connection electrode provided on a face in either of theinsulating component, the side face of the connection electrode isembedded inside the insulating component, and the whole of at least oneface of the connection electrode is exposed from the insulatingcomponent. In this configuration, since the whole of at least one faceof the connection electrode is exposed from the insulating component, anexternal lead-out electrode does not come into contact with theinsulating component. Therefore, it is possible to accurately providethe connection electrode with high density.

It should be noted that, in the present invention, the semiconductordevice may have a configuration in which a side face of the connectionelectrode comes into contact with the insulating component. Further, thewhole of a side face outer periphery of the connection electrode maycome into contact with the insulating component. Furthermore, in thepresent invention, a face of the interconnect component of a sideprovided with the connection electrode may be a flat face.

Moreover, in the present invention, the connection electrode includes anelement connection electrode electrically connecting with thesemiconductor element and an external connection electrode connectingwith the conductive component outside the element. In the presentinvention, it is possible to realize the above described configurationin either of them.

In the semiconductor device of the present invention, the semiconductordevice may have a configuration in which the conductive componentincludes an interconnect provided in such a way as to come into contactwith a face in either of the insulating component; and at least a partof a side face of the interconnect and one face of the interconnect areexposed from the insulating component. Therefore, it is possible torealize a configuration in which the fine interconnect is capable ofbeing provided with high density.

It should be noted that, in the semiconductor device of the presentinvention, the semiconductor device may have a configuration in whichthe interconnect is electrically connected with the lead-out electrode.Further, in the present invention, the whole side face of theinterconnect may be exposed from the insulating component.

In the semiconductor device of the present invention, at least a part ofthe interconnect may be embedded in the sealing resin. Therefore, it ispossible to enhance strength of the semiconductor device.

In the semiconductor device of the present invention, a minimum intervalbetween the conductive components may not be more than 50 μm. Therefore,it is possible to enhance a data transfer characteristics between thesemiconductor elements.

In the semiconductor device of the present invention, the conductivecomponent may be employing various kinds of planar arrangement. Forinstance, arrangement such as a tetragonal lattice shape, or a diagonallattice shape such as a staggered lattice shape or the like may beemployed.

In the semiconductor device of the present invention, the semiconductordevice may have a configuration in which the position of the firstconductive pad provided at a side of the interconnect component of thefirst semiconductor element is the same as the position of the secondconductive pad provided on a face of a side of the interconnectcomponent of the second semiconductor element in a plan view. Therefore,it is possible to further enhance the data transfer characteristicsbetween the semiconductor elements.

In the semiconductor device of the present invention, the semiconductordevice may have a configuration in which having a through plug extendingthrough a sealing resin is provided. Having such configuration, it ispossible to obtain excellent secondary mounting reliability due to athermal stress reducing function. Further, the semiconductor device mayhave a configuration in which the whole semiconductor device to be acompound element is bonded to a flip chip connection. It should be notedthat, in the semiconductor device of the present invention, thesemiconductor device may have a configuration in which a through plug isconnected with the interconnect inside the interconnect layer.

In the semiconductor device of the present invention, the interconnectlayer may be a multi-layered interconnect layer. Therefore, it ispossible to enhance the degree of freedom in designing of theinterconnect component.

In the semiconductor device of the present invention, the firstsemiconductor element may be embedded in a sealing resin. Therefore, itis possible to insulate a face of the first semiconductor elementsurely, and it is possible to protect the first semiconductor element.

According to the present invention, there is provided a method formanufacturing a semiconductor device comprising: preparing aninterconnect layer on a substrate, connecting a first semiconductorelement on the interconnect layer, covering a face of the interconnectlayer and a side face of the first semiconductor element with a sealingresin, thinning the substrate from a back face of a forming face of theinterconnect layer of the substrate, and connecting the secondsemiconductor element with the first semiconductor element through theinterconnect layer so as to cause the second semiconductor element toface to the first semiconductor element.

Further, in the semiconductor device of the present invention, thesemiconductor device may have a configuration in which the semiconductordevice is obtained in such a way that the interconnect component isformed on the substrate, the first semiconductor element is connected onthe interconnect component, and the substrate is removed after a sideface of the first semiconductor element and the exposed face of theinterconnect component are covered with the sealing resin.

In the present invention, the first semiconductor element is connectedwith the interconnect component in a state where the interconnectcomponent is provided on the substrate, after that, the substrate isthinned or removed. For this reason, it is possible to performconnecting between the first semiconductor element and the interconnectcomponent. It should be noted that, in the present invention, “somethingis provided on the semiconductor substrate” may be in either ofconstitution in which “something is provided in such a way as to comeinto contact with the semiconductor substrate”, or, constitution inwhich “something is provided through the other layer”.

In the semiconductor device of the present invention, a linear expansioncoefficient of the substrate may not be less than 0.5 ppm/degree C. tonot more than 5 ppm/degree C. Therefore, it is possible to realize aconfiguration more excellent in manufacturing stability.

In the semiconductor device of the present invention, the substrate maybe a silicon substrate. Therefore, it is possible to realize aconfiguration more excellent in manufacturing stability.

Further, in the method manufacturing the semiconductor device of thepresent invention, the substrate used for preparing the interconnectlayer, the semiconductor substrate constituting the first semiconductorelement, and the semiconductor substrate constituting the secondsemiconductor element may be formed with the same material. Therefore,it is possible to surely suppress warpage at the time the substrate isconnected with the elements. For this season, it is possible to enhanceconnecting reliability.

Further, in the method for manufacturing the semiconductor device of thepresent invention, the thinning the substrate may include removing thesubstrate to expose a face of the interconnect layer. Having suchprocess, it is possible to stably manufacture the semiconductor devicewhile simplifying the configuration of the semiconductor device.

In the method for manufacturing the semiconductor device of the presentinvention, the preparing the interconnect layer may include preparingthe substrate in which an insulating film and a support layer supportingthe interconnect layer are sequentially formed on a face of thesubstrate, and providing the interconnect layer on the support layer.Having such process, it is possible to further enhance the connectingreliability between the interconnect layer and the semiconductorelement.

According to the present invention, a technique for connecting among aplurality of semiconductor elements with high density can be realized.Further, according to the present invention, a technique enhancing theconnecting reliability among the plurality of the semiconductor elementscan be realized.

BRIEF DESCRIPTION OF THE DRAWINGS

The above and other objects, advantages and features of the presentinvention will be more apparent from the following description taken inconjunction with the accompanying drawings, in which:

FIG. 1 is a cross-sectional view schematically showing configuration ofa semiconductor device according to an embodiment;

FIGS. 2A, 2B and 2C are cross-sectional process views schematicallyshowing a manufacturing process of the semiconductor device according tothe embodiment;

FIGS. 3A, 3B and 3C are cross-sectional process views schematicallyshowing a manufacturing process of the semiconductor device according tothe embodiment;

FIGS. 4A, 4B and 4C are cross-sectional process views schematicallyshowing a manufacturing process of the semiconductor device according tothe embodiment;

FIG. 5 is a cross-sectional view schematically showing the configurationof the semiconductor device according to the embodiment;

FIG. 6 is a cross-sectional view schematically showing the configurationof the semiconductor device according to the embodiment;

FIG. 7 is a cross-sectional view schematically showing the configurationof the semiconductor device according to the embodiment;

FIG. 8 is a cross-sectional view schematically showing the configurationof the semiconductor device according to the embodiment;

FIGS. 9A, 9B and 9C are cross-sectional process views schematicallyshowing a manufacturing process of the semiconductor device according tothe embodiment;

FIGS. 10A, 10B and 10C are cross-sectional process views schematicallyshowing a manufacturing process of the semiconductor device according tothe embodiment;

FIG. 11 is a cross-sectional view schematically showing theconfiguration of the semiconductor device according to the embodiment;

FIG. 12 is a cross-sectional view schematically showing theconfiguration of the semiconductor device according to the embodiment;

FIG. 13 is a cross-sectional view schematically showing theconfiguration of the semiconductor device according to the embodiment;

FIG. 14 is a cross-sectional view schematically showing theconfiguration of the semiconductor device according to the embodiment;

FIGS. 15A and 15B are cross-sectional views schematically showing theconfiguration of the semiconductor device according to the embodiment;

FIG. 16 is a cross-sectional view schematically showing theconfiguration of the semiconductor device according to the embodiment;

FIGS. 17A and 17B are cross-sectional views schematically showing theconfiguration of the semiconductor device according to the embodiment;

FIGS. 18A, 18B and 18C are cross-sectional process views schematicallyshowing a manufacturing process of the semiconductor device according tothe embodiment;

FIGS. 19A and 19B are cross-sectional process views schematicallyshowing a manufacturing process of the semiconductor device according tothe embodiment;

FIGS. 20A and 20B are cross-sectional views schematically showing theconfiguration of the semiconductor device according to the embodiment;

FIGS. 21A, 21B and 21C are cross-sectional process views schematicallyshowing a manufacturing process of the semiconductor device according tothe embodiment;

FIGS. 22A, 22B and 22C are cross-sectional process views schematicallyshowing a manufacturing process of the semiconductor device according tothe embodiment;

FIG. 23 is a cross-sectional process view schematically showing amanufacturing process of the semiconductor device according to theembodiment;

FIG. 24 is a cross-sectional view schematically showing theconfiguration of the semiconductor device according to the embodiment;

FIG. 25 is a cross-sectional view schematically showing theconfiguration of the semiconductor device according to the embodiment;

FIGS. 26A, 26B and 26C are cross-sectional process views schematicallyshowing a manufacturing process of the semiconductor device according tothe embodiment;

FIGS. 27A, 27B and 27C are cross-sectional process views schematicallyshowing a manufacturing process of the semiconductor device according tothe embodiment;

FIGS. 28A and 28B are cross-sectional process views schematicallyshowing a manufacturing process of the semiconductor device according tothe embodiment;

FIG. 29 is a cross-sectional view schematically showing theconfiguration of the semiconductor device according to the embodiment;

FIG. 30 is a cross-sectional view schematically showing theconfiguration of the semiconductor device according to the embodiment;

FIG. 31 is a cross-sectional view schematically showing theconfiguration of the semiconductor device according to the embodiment;

FIG. 32 is a cross-sectional view schematically showing theconfiguration of the semiconductor device according to the embodiment;

FIG. 33 is a cross-sectional view schematically showing theconfiguration of the semiconductor device according to the embodiment;

FIG. 34 is a cross-sectional view schematically showing theconfiguration of the semiconductor device according to the embodiment;

FIG. 35 is a cross-sectional view schematically showing theconfiguration of the semiconductor device according to the embodiment;

FIGS. 36A, 36B and 36C are cross-sectional process views schematicallyshowing a manufacturing process of the semiconductor device according tothe embodiment;

FIGS. 37A, 37B and 37C are cross-sectional process views schematicallyshowing a manufacturing process of the semiconductor device according tothe embodiment; and

FIGS. 38A, 38B and 38C are cross-sectional process views schematicallyshowing a manufacturing process of the semiconductor device according tothe embodiment.

DETAILED DESCRIPTION OF THE INVENTION

The invention will now be described herein with reference toillustrative embodiments. Those skilled in the art will recognize thatmany alternative embodiments can be accomplished using the teachings ofthe present invention and that the invention is not limited to theembodiments illustrated for explanatory purposed.

Hereinafter, there will be described embodiments of the presentinvention using drawings. It should be noted that, in the wholedrawings, common symbols are attached to the same constitution elementsnot to present explanation appropriately.

A semiconductor device 110 shown in FIG. 7 comprises an interconnectcomponent 101 in a shape of a flat plate, a first semiconductor element113 provided on a face on one side of the interconnect component 101, asealing resin (insulating resin 119) covering the face on one side and aside face of the first semiconductor element 113, and a secondsemiconductor element 111 provided on a face on the other side of theinterconnect component 101. The interconnect component 101 is providedwith an interconnect layer 103, a support layer (silicon layer 105)supporting the interconnect layer 103, and a through electrode(conductive via 109), which extends through the interconnect layer 103and the support layer. The first semiconductor element 113 iselectrically connected with the second semiconductor element 111 throughthe interconnect component 101.

A semiconductor device 100 shown in FIG. 1 comprises the interconnectcomponent 101 in a shape of flat plate, the first semiconductor element113 provided on a face on one side of the interconnect component 101, asealing resin (insulating resin 119) covering the face on one side and aside face of the first semiconductor element 113, and a secondsemiconductor element 111 provided on a face on the other side of theinterconnect component 101. The interconnect component 101 is providedwith an interconnect layer 103 having a flat plate shaped insulatingcomponent (insulating resin film 141 (FIG. 32)), and a conductivecomponent (conductive via 109) extending through the insulatingcomponent. The first semiconductor element 113 is electrically connectedwith the second semiconductor element 111 through the conductivecomponent.

A method for manufacturing the semiconductor device 100 shown in FIGS.2A to 4C comprises preparing an interconnect layer 103 on a substrate(an SOI substrate 129), connecting a first semiconductor element 113 onthe interconnect layer 103, covering a face of the interconnect layer103 and a side face of the first semiconductor element 113 with asealing resin (insulating resin 119), thinning the substrate from theback face of the forming face of the interconnect layer 103 of thesubstrate, and a step of connecting the second semiconductor element 111with the first semiconductor element 113 through the interconnect layer103 so as to cause the second semiconductor element 111 to face to thefirst semiconductor element 113.

First Embodiment

FIG. 1 is a cross-sectional view schematically showing a structure ofthe semiconductor device 100 according to the present embodiment. Thesemiconductor device 100 shown in FIG. 1 has the interconnect component101 in the shape of a flat plate, the first semiconductor element 113provided on a face on one side of the interconnect component 101, theinsulating resin 119, which coats the face on one side where the firstsemiconductor element 113 of the interconnect component 101 is providedand a side face of the first semiconductor element 113, and the secondsemiconductor element 111 provided in such a way as to cause the secondsemiconductor element 111 to face to the first semiconductor element 113on a face on the other side of the interconnect component 101.

The interconnect component 101 has a configuration where theinterconnect layer 103, a silicon layer 105 and an insulating film 107are sequentially formed into a multi-layered structure. The firstsemiconductor element 113 is provided at a side of the interconnectlayer 103, and the second semiconductor element 111 is provided at aside of the insulating film 107.

The interconnect layer 103 has a flat plate shaped insulating componentand a conductive component extending through (penetrating) theinsulating component. The second semiconductor element 111 iselectrically connected with the first semiconductor element 113 throughthe conductive component. Further, the interconnect layer 103 isprovided with an interconnect having predetermined shape andarrangement. The interconnect layer 103 may be a single layer, or amultilayer. It should be noted that specific structure of theinterconnect layer 103 may be realized by the later described structuredescribed in the third embodiment and the seventh embodiment.

The silicon layer 105 is a support layer supporting the interconnectlayer 103. An insulating film 107, which is provided on a face of thesilicon layer 105, on opposite side to the interconnect layer 103 ismade of, for instance, an oxide film such as SiO₂ or the like, or anitride film such as SiN or SiON or the like.

It should be noted that, as for the support layer of the interconnectlayer 103, in the present embodiment and later embodiments, the siliconlayer 105 is exemplified. However, as for the support layer of theinterconnect layer 103, there may be employed another material having acoefficient of thermal expansion approximately the same degree as Si,which is generally used as a substrate of the first semiconductorelement 113 and the second semiconductor element 111.

It is possible to use materials whose linear expansion coefficient isnot less than 0.5 ppm/degree C. to not more than 5 ppm/degree C. as thesupport layer. It is possible to enhance a manufacturing yield of thesemiconductor device 100 upon making the linear expansion coefficient tobe not less than 0.5 ppm/degree C. Furthermore, electrical connectingreliability between the first semiconductor element 113 and the secondsemiconductor element 111 is capable of being secured sufficiently uponmaking the linear expansion coefficient to be not more than 5 ppm/degreeC. Moreover, the support layer is capable of being constituted of thematerial excellent in thermal conductivity. It is possible to employ,specifically, ceramic materials such as AlN or the like, borosilicateglass or the like such as Pyrex™ glass or the like as materials of thesupport layer in addition to silicon.

Furthermore, the interconnect layer 103 has a conductive via 109provided while extending through (penetrating) the silicon layer 105 andthe insulating film 107. Thereby, electric conduction of both faces ofthe interconnect layer 103 is secured. There is no limitation especiallyon the planar arrangement of the conductive via 109. It is possible toappropriately select the planar arrangement of the conductive via 109 inaccordance with a design of the semiconductor device 100. For instance,the conductive via 109 can be arranged in a tetragonal lattice shape, orthe conductive via 109 can be arranged in a diagonal lattice shape suchas staggered lattice shape or the like.

The first semiconductor element 113 is bonded to a side of theinterconnect layer 103 of the interconnect component 101 through anunderfill resin 127. A conductive component (not shown in the drawings)inside the first semiconductor element 113 is flip chip-connected withthe conductive via 109 through an electrode 117 embedded inside theunderfill resin 127. Furthermore, in the interconnect component 101,there is provided the insulating resin 119 covering a side wall of thefirst semiconductor element 113 on a face of a side where the firstsemiconductor element 113 is provided.

Constitution of the first semiconductor 113 and the second semiconductor111 is capable of being selected appropriately according to a design ofthe semiconductor device 100. For instance, it is possible to employ amemory LSI chip as the first semiconductor element 113, and to employ alogic LSI chip as the second semiconductor element 111.

There is no limitation especially on the material of the insulatingresin 119 to be a sealing resin. It is possible to use a resin forsealing the semiconductor with appropriately selected. For instance, itis possible to employ an epoxy resin including an inorganic fillingmaterial such as silica, alumina or the like.

A conductive plug 121 extends through (penetrates) the insulating resin119, and is electrically connected with a conductive component insidethe interconnect component 101. A face of the conductive plug 121 onopposite side to the interconnect component 101 is exposed from theinsulating resin 119. An electrode terminal 123 is provided on anexposed face. The conductive plug 121 is electrically connected with theoutside through the electrode terminal 123.

The second semiconductor element 111 is bonded to a side of theinsulating film 107 of the interconnect component 101 through anunderfill resin 125. A conductive component (not shown in the drawings)inside the second semiconductor element 111 is flip-chip connected withthe conductive via 109 through an electrode 115 embedded inside theunderfill resin 125.

In the semiconductor device 100, the first semiconductor element 113 andthe second semiconductor element 111 have a constitution where the firstsemiconductor element 113 is electrically connected with the secondsemiconductor element 111 through the electrode 117, the conductivecomponent inside the interconnect layer 103, the conductive via 109 andthe electrode 115. It should be noted that, in the present embodimentand other later embodiments, it is possible to employ, for instance, theelectrode 115 and the electrode 117 as bump.

Hereinafter, there will be explained a method for manufacturing thesemiconductor 100 shown in FIG. 1. The semiconductor device 100 isobtained in such a way that the interconnect layer 103 is formed on thesilicon substrate, the first semiconductor element 113 is connected onthe interconnect layer 103, and the silicon substrate is removed afterside face of the first semiconductor element 113 and the exposed face ofthe first semiconductor element 113 are resin-sealed. FIGS. 2A to 2C,FIGS. 3A to 3C, and FIGS. 4A to 4C are cross-sectional process viewsshowing manufacturing process of the semiconductor device 100.

Firstly, as shown in FIG. 2A, an SOI (silicon on insulator) substrate129 where the silicon layer 105 is formed on an upper part of thesilicon substrate 133 in wafer state through the insulating film 107 isprepared. The insulating film 107 may be a single layer, or may be amultilayer.

Next, an opening extending through (penetrating) the silicon layer 105and the insulating film 107 is formed at the position where theconductive via 109 is provided on the SOI substrate 129. And then, adiffusion barrier is formed on a face of the SOI substrate 129 on whichthe opening is provided. Thereby, it is possible to prevent the materialconstituting the conductive via 109 from diffusing into the SOIsubstrate 129. And then, the conductive via 109 is formed upon embeddingthe opening with conductive material (FIG. 2B). The conductive via 109is capable of being provided on a region where the second semiconductorelement 111 and the first semiconductor element 113 are bonded in theSOI substrate 129.

As for the material of the conductive via 109, it is possible to use,for instance, metals such as copper, aluminum, or tungsten or the like,or polycrystalline silicon or the like. It should be noted that it maybe also suitable to employ a constitution where the conductive via 109does not penetrate the insulating film 107, but the conductive via 109is provided across a predetermined position inside the insulating film107 from the silicon layer 105. Furthermore, it may be also suitable toemploy a constitution where the conductive via 109 penetrates thesilicon layer 105 and comes into contact with an upper part of theinsulating film 107.

Next, the interconnect layer 103 is formed on an upper part of the SOIsubstrate 129 (FIG. 2C). A method for manufacturing the interconnectlayer 103 is capable of employing a method, which is later described inthe third embodiment and the seventh embodiment. Moreover, it may besuitable that the insulating film is formed on the silicon layer 105;and an interconnect with predetermined shape is arranged on apredetermined position using, for instance, a damascene process. Theinterconnect is electrically connected with the conductive via 109. Itis suitable that the material of the interconnect is made the samematerial as the material of the conductive via 109, or, also it ispossible to employ different conductive material. The interconnect layer103 may be a single-layer structure, or a multi-layered structure.Furthermore, before forming the interconnect layer 103, it may be alsosuitable to form predetermined element, for instance, an active elementsuch as a transistor or the like, or a passive element such as a memoryelement or the like on the silicon layer 105.

Next, a conductive post 131 that is a conductive plug 121 in FIG. 1 isformed on the interconnect layer 103 (FIG. 3A). The material of theconductive post 131 is capable of being employed with metals, such asfor instance, copper or gold or the like. Moreover, the conductive post131 is capable of being manufactured in such a way that a resistpattern, which causes a region to provide the conductive post 131 to bean opening, is provided on the interconnect layer 103, followed bycausing a metal film to grow inside the opening by, for instance, anelectroless plating technique of a semi-additive technique.

Next, the first semiconductor element 113 is electrically connected onthe interconnect layer 103. As for the connecting method, it is possibleto use various kinds of methods. For instance, a bump electrode isformed as an electrode 117, which is formed on the first semiconductorelement 113 in advance. And then, it is possible to connect the firstsemiconductor element 113 with the interconnect layer 103 uponperforming a bump bonding between the electrode 117 and the interconnectinside the interconnect layer 103. At this time, it is possible to usethe flip-chip bonding technique. It is possible to connect theinterconnect layer 103 with the first semiconductor element 113 surelyby the simple technique upon using the flip-chip bonding technique. Inaddition, as for another connecting technique, for instance, it ispossible to employ an activated bonding technique in which a surface ofthe interconnect layer 103 and a surface of the first semiconductorelement 113 are pressed and bonded in a state where both surfaces areactivated by a method such as plasma irradiation or the like. Afterbonding, the underfill resin 127 is filled between the firstsemiconductor element 113 and the SOI substrate 129 (FIG. 3B).

Next, the whole top face of the interconnect layer 103 is sealed withthe insulating resin 119 with insulating property upon using a techniquesuch as a transfer molding (FIG. 3C). Thereby, the first semiconductorelement 113 and the conductive post 131 are embedded inside theinsulating resin 119. Sealing method is capable of being selected fromvarious kinds of methods such as a method for performing pressurebonding of the insulating resin sheet or a method for curing a liquidresin after applying the liquid resin, in addition to the above method.

Next, the insulating resin 119 is made thin by grinding of forming faceside of the insulating resin 119 or the like to expose an upper face ofthe first semiconductor element 113 and an end portion of the conductivepost 131 (FIG. 4A). It should be noted that this process is also capableof being performed after removing (FIG. 4B) of a silicon substrate 133described later. Furthermore, in the forming the insulating resin 119described above while using FIG. 3C, it is also possible to control afilm thickness of the insulating resin 119 into a predeterminedthickness in advance. In such a case, it is possible to omit an exposingthe conductive post 131.

And then, the silicon substrate 133 is removed from a side of the backface of the bonding face of the first semiconductor element 113. As forthe removing technique at this time, it is possible to employ amechanical grinding, CMP, or chemical etching or the like. Moreover, asanother removing technique, it is possible to employ a technique that alayer that is low in the adhesion is formed in advance on an interfacebetween the silicon substrate 133 and the interconnect layer 103, andfrom a part of this layer that is low in the adhesion, the interposinglayer is removed in turn. Further, an end face of the conductive via 109is exposed upon removing a part of the insulating film 107 or adiffusion barrier (not shown in the drawing) (FIG. 4B). There is nolimitation especially in the process to expose the conductive via 109.Various kinds of methods are capable of being selected.

Next, the second semiconductor element 111 is connected with the exposedconductive via 109. It is possible to use the method for connecting thefirst semiconductor element 113 (FIG. 3B) as the connecting method. Forinstance, an electrode 115 is formed on a face of the secondsemiconductor element 111, followed by bonding the silicon layer 105 tothe conductive via 109, so that it is possible to connect with eachother. After the connecting, it may be suitable to fill the underfillresin 125 between the second semiconductor element 111 and the SOIsubstrate 129 (FIG. 4C).

And then, an electrode terminal 123 such as solder bump or the like isformed on the exposed face of the conductive post 131. According to theabove process, the semiconductor device 100 shown in FIG. 1 ismanufactured. The above process, initially, is performed in a statewhere the semiconductor device is constituted by comprising a pluralityof the second semiconductor elements 111 and a plurality of the firstsemiconductor elements 113 on the wafer, that is, the silicon substrate133. However, after the sealing process by using the insulating resin119, it is possible to separate the semiconductor device into aplurality of chips at an arbitrary position. Moreover, as describedabove, concerning the order of the process, change of reversing theorder between removing the silicon substrate 133 and grinding of theinsulating resin 119 or the like is possible.

Next, there will be described effects of the semiconductor device 100shown in FIG. 1.

In the semiconductor device 100 shown in FIG. 1, the interconnectcomponent 101 has a structure, in which the insulating film 107, thesilicon layer 105 and the interconnect layer 103 are sequentially formedinto a multi-layered structure. The semiconductor device has a structurewhere the through electrode constituted of the conductive componentinside the interconnect layer 103 and the conductive via 109 provided byconnecting with the conductive component extends through (penetrates)the interconnect component 101. Furthermore, the first semiconductorelement 113 and the second semiconductor element 111 are faced to bebonded to both faces of the interconnect component 101.

It is possible to suppress occurring of warpage caused by difference ofa thermal expansion coefficient, deterioration of bonding accuracy ordeterioration of connecting reliability caused by residual thermalstress, upon providing the silicon layer 105 to be the support layer.Therefore, it is possible to realize connection with high accuracy andhigh reliability. Furthermore, even though the conductive via 109 isarranged with high density, it is possible to connect surely theinterconnect component 101 with the first semiconductor element 113 andthe second semiconductor element 111. For this reason, it is possible torealize high density arrangement of the through electrode structureextending through (penetrating) the interconnect component 101. Itshould be noted that the through electrode structure penetrating theinterconnect component 101 is capable of being realized with a structurecomposed of a plurality of the conductive components.

Moreover, silicon devices, that is, the second semiconductor element 111and the first semiconductor element 113 with the same thermal expansioncoefficient are connected with both faces of the interconnect component101 having the silicon layer 105 as the support layer. For this reason,the semiconductor device 100 is excellent in symmetry of structure.Consequently, the semiconductor device 100 is excellent in manufacturingstability, and has a structure where the first semiconductor element 113is connected surely with the second semiconductor element 111.

Thus, in the semiconductor device 100, the connection with high densityand excellent reliability is capable of being realized between the firstsemiconductor element 113 and the second semiconductor element 111,which are provided on both faces of the interconnect component 101. Itis possible to perform connection between a plurality of chips orlarge-scale chips with high interconnect density, upon using theinterconnect component 101 having the silicon layer 105 capable ofenhancing connecting reliability to the semiconductor element.

For instance, the semiconductor device 100 has a constitution, which iscapable of coping with also constitution where, for instance, anelectrode pitch interval is not more than 50 μm (micrometer), that is,the minimum interval of the conductive via 109 is, for instance, notmore than 50 μm (micrometer). Moreover, connecting structure through theinterconnect component 101 with high density is realized. Therefore,high degree of freedom to in the designing of the chip size, electrodeposition, and the interconnect connection to an outside terminal isprovided. If a logic LSI chip that generates high heating is employed asthe second semiconductor element 111, it is possible to add heatradiation mechanism such as a heat spreader or the like to the logic LSIchip.

Furthermore, in the semiconductor device 100, a plurality ofsemiconductor elements, which are connected with both faces of the flatplate shaped interconnect component 101, are electrically connected witheach other through the conductive via 109 penetrating the interconnectcomponent 101 and the interconnects inside the interconnect layer 103,which connects with the conductive via 109. The first semiconductorelement 113 and the second semiconductor element 111 are electricallyconnected with each other through the conductive via 109 to be theconductive plug penetrating the silicon layer 105 and the insulatingfilm 107, and the interconnect inside the interconnect layer 103,therefore, it is possible to shorten a connecting distance between thefirst semiconductor element 113 and the second semiconductor element111. For this reason, it is possible to increase processing speed forcommunication between the first semiconductor element 113 and the secondsemiconductor element 111.

Also, the semiconductor device has a structure excellent in electricalcharacteristics upon realizing high density connection with fineinterconnect between a plurality of LSIs. Furthermore, the semiconductordevice 100 has high degree of design freedom as compared with amulti-chip package such as the semiconductor device with conventionalchip-on-chip (COC) structure. In accordance with this, it is possible torealize easily structure excellent in heat dissipating property.Moreover, it is possible to realize BGA type semiconductor device withhigh secondary mounting reliability. Further, thus the silicon substrate133 is removed after one side of the interconnect component 101including the first semiconductor element 113 bonded in high accuracy isresin-sealed. The second semiconductor element 111 is connected with anopposite face. Therefore, it is possible to realize electricalconnection with high density between the semiconductor elements.

In addition, in the semiconductor device 100, an effect corresponding toenlargement of a bus width can be obtained because it is possible torealize electrical connection with high density between thesemiconductor elements. For this reason, it is possible to realize highspeed operation and the reduction of electric power consumptionsimultaneously. For instance, it is possible to reduce clock frequencyat the same processing speed. Furthermore, it is possible to increasethe processing speed in the same clock frequency.

Consequently, for instance, it is possible to apply the semiconductordevice 100 to a chip-on-chip connection between a large capacity memoryand the system LSI. At this time, it is possible to realize an increasein the number of multiple pins and a decrease in an interval of multiplepins of an electrode connecting such as the bump connecting or the like.Furthermore, the interconnect component 101 is provided between thesemiconductor chip on which the logic circuit is formed and the memorychip on which a memory element such as DRAM or the like is provided, andit is possible to use preferably as a connecting component connectingthem.

Moreover, in the semiconductor device 100, a layer composed of theinsulating resin 119 is formed at least on one side of the interconnectcomponent 101. Specifically, a layer of the insulating resin 119 isformed on a face of a side of the interconnect layer 103 of theinterconnect component 101. Furthermore, an electrode terminal 123 isformed on an exposed face from the insulating resin 119 of theconductive plug 121, which extends through (penetrates) the insulatingresin 119, connected with the interconnect inside the interconnect layer103. More excellent secondary mounting reliability in a thermal stressreducing function can be obtained upon employing a structure in whichthe conductive plug 121 to be a resin penetrating through hole is used.

Moreover, in the semiconductor device 100, the flat plate shapedinterconnect component 101 is formed on the silicon substrate 133. Theinterconnect component 101 to perform electrical connection between thesemiconductor elements is formed on the silicon substrate 133 with highrigidity; therefore it is possible to make an interconnect pattern fine.

Moreover, the semiconductor device 100 is obtained in such a way thatthe silicon substrate 133 is removed, after the interconnect component101 is provided on the silicon substrate 133 and bonding the firstsemiconductor element 113 on the interconnect component 101. It ispossible to suppress deterioration of connecting stability due todiscrepancy of the thermal expansion coefficient in a connecting processbetween the first semiconductor element 113 and the conductive materialinside the interconnect component 101 upon using the silicon substrate133. For this reason, the bonding with very high accuracy and highreliability can be realized.

Furthermore, the semiconductor device 100 is manufactured in such a waythat an LSI, that is, the second semiconductor element 111 is connectedto also an opposite face, after removing the silicon substrate 133.Thus, the semiconductor device 100 has a constitution in whichconnection with high density and stability is realized between aplurality of LSIs with the fine interconnect. Therefore, it is possibleto achieve suitable operating characteristics, which cannot be realizedwith the conventional system-in-package (SiP).

It should be noted that, in the semiconductor device 100 shown in FIG. 1and the semiconductor device described in the later embodiments, it isalso possible to realize a constitution in which the first semiconductorelement 113 is embedded in the insulating resin 119. FIG. 5 is across-sectional view schematically showing a semiconductor device havinga structure in which the first semiconductor element 113 is embeddedinside the insulating resin 119.

Further, in the semiconductor device 100 shown in FIG. 1 and in thesemiconductor device having the silicon layer 105 described in the laterembodiments, an active element such as a transistor or the like may beformed on the silicon layer 105 to be the support layer. In such a wayas above, it is possible to make the interconnect component 101 furtherhigh performance.

Furthermore, in the semiconductor device 100 and in the semiconductordevice 100 described in the later embodiments, the insulating resin maybe provided on a face of a side to which the second semiconductorelement 111 of the interconnect component 101 is bonded. FIG. 6 is across-sectional view schematically showing a structure of the flip-chiptype semiconductor device provided with the insulating resin 135covering a side wall of the second semiconductor element 111 and a faceof the insulating film 107. It is possible to enhance strength of thesemiconductor device upon making the both faces of the interconnectcomponent 101 sealed structures, which is sealed by the insulating resin119 and the insulating resin 135. Furthermore, it is possible to enhancesymmetry of structure of both faces of the interconnect component 101;therefore, it is possible to improve manufacturing stability.

In the following embodiment, there will be mainly described theembodiment with respect to a part different from the first embodiment.

Second Embodiment

The semiconductor device 100 (FIG. 1) described in the first embodimentis provided with the interconnect component 101 of the structure inwhich the interconnect layer 103, the silicon layer 105 and theinsulating film 107 are sequentially formed into a multi-layeredstructure. However, the interconnect component 101 may be a structurecomposed of a multi-layered component of the interconnect layer 103 andthe silicon layer 105. FIG. 7 is a cross-sectional view schematicallyshowing a structure of a semiconductor device 110 according to thepresent embodiment.

A basic structure of the semiconductor device 110 shown in FIG. 7 isapproximately the same as the semiconductor device 100 (FIG. 1)described in the first embodiment. The semiconductor device 110 isdifferent from the semiconductor device 100 in that the insulating film107 is not provided therewith, and the second semiconductor element 111is connected with a face of the silicon layer 105 of the interconnectcomponent 101 through the electrode 115 and the underfill resin 127.Furthermore, in the semiconductor device 110, the conductive via 109 iselectrically connected with the interconnect inside the interconnectlayer 103 while extending through (penetrating) the silicon layer 105.

The semiconductor device 110 is capable of being manufactured usingfollowing process shown in FIGS. 36A to 36C, FIGS. 37A to 37C and FIGS.38A to 38C. Firstly, the conductive via 109 is formed on the siliconsubstrate 133 (FIG. 36A and FIG. 36B), and the interconnect layer 103 isformed on a forming face of the conductive via 109 (FIG. 36C). Next, aconductive post 131 is formed on the interconnect layer 103 (FIG. 37A).Then, the first semiconductor element 113 is electrically connected overthe interconnect layer 103, and the underfill resin 127 is filledbetween the first semiconductor element 113 and the silicon substrate133 (FIG. 37B) Next, the whole top face of the interconnect layer 103 issealed with the insulating resin 119 with insulating property upon usinga technique such as a transfer molding (FIG. 37C). Next, the insulatingresin 119 is made thin by grinding of forming face side of theinsulating resin 119 and the like to expose an upper face of the firstsemiconductor element 113 and an end portion of the conductive post 131(FIG. 38A). And then, the silicon substrate 133 is removed from a sideof the back face of the bonding face of the first semiconductor element113. Further, an end face of the conductive via 109 is exposed uponremoving a part of the silicon layer 105 or a diffusion barrier (notshown in the drawing) (FIG. 38B). It should be noted that, in theprocess, the silicon substrate 133 is made thin from a rear face, andthe silicon substrate 133 with predetermined thickness is remained asthe silicon layer 105 without removing entirely the silicon substrate133. Next, the second semiconductor element 111 is connected with theexposed conductive via 109 and the electrode 115. After the connecting,it may be suitable to fill the underfill resin 125 between the secondsemiconductor element 111 and the silicon layer 105 (FIG. 38C).

Also in the semiconductor device 110 shown in FIG. 7, the interconnectcomponent 101 of the structure in which the interconnect layer 103 andthe silicon layer 105 to be the support layer are sequentially formedinto the multi-layered structure is provided. For this reason, thesemiconductor device 110 has the structure in which difference of thethermal expansion coefficient at the time of bonding between the firstsemiconductor element 113 and the second semiconductor element 111 issmall. Therefore, it is possible to secure sufficiently connectingreliability among them and it is possible to decrease sufficientlyinterval of the connected conductive via 109.

Moreover, in the semiconductor device 110, it is possible to utilize thesilicon substrate 133 with bulk state; thus it is possible to providethe interconnect component 101 having the silicon layer 105 withpredetermined thickness upon controlling grinding thickness of thesilicon substrate 133. For this reason, it is not necessary to use anSOI substrate 129, thus it is possible to simplify the structure of thesemiconductor device 110.

It should be noted that, in the semiconductor device 110, a face of thesilicon layer 105 in the periphery of the conductive via 109 isinsulated. Thereby, insulating characteristics between electrodes of thesecond semiconductor element 111 can be secured. In the semiconductordevice 110 shown in FIG. 7, the semiconductor device 110 has thestructure in which the periphery of the conductive via 109 is insulated,upon being embedded with the underfill resin 125 having insulatingcharacteristics between the silicon layer 105 and the secondsemiconductor element 111.

Third Embodiment

In the semiconductor device described in the above embodiments, theinterconnect component 101 may be constituted of only the interconnectlayer 103. FIG. 8 is a cross-sectional view schematically showing astructure of a semiconductor device 120 according to the presentembodiment.

A basic structure of the semiconductor device 120 shown in FIG. 8 isapproximately the same as the semiconductor device 100 (FIG. 1)described in the first embodiment. However, the semiconductor device 120is different from the semiconductor device 100 in that the interconnectcomponent 101 is composed of only the interconnect layer 103, and thefirst semiconductor element 113 and the second semiconductor element 111are provided in such a way as to face to different faces of theinterconnect layer 103. Further, the semiconductor device 120 isdifferent from the semiconductor device 100 in that the secondsemiconductor element 111 is connected with a face of the interconnectlayer 103 through the electrode 115 and the underfill resin 125.

In the semiconductor device 120, the interconnect component 101 composedof the interconnect layer 103 is capable of being manufactured using,for instance, the following process. FIGS. 9A to 9C and FIGS. 10A to 10Care cross-sectional process views schematically showing manufacturingprocess of the interconnect layer 103.

Firstly, a metal seed layer 137 is formed on a face of the siliconsubstrate 133 using the sputtering technique or the like (FIG. 9A). Theseed layer 137 is capable of being realized by, for instance, Ni layer.Next, a resist pattern to expose a position for forming interconnect isformed on the seed layer 137, followed by forming a connection electrode139 having a predetermined pattern, with an exposed portion of the seedlayer 137 as a starting point (FIG. 9B). The connection electrode 139 isan electrode at a lower side of an insulating resin film 141 describedlater. The connection electrode 139 is capable of being used as anexternal lead-out electrode. The connection electrode 139 is capable ofbeing formed using, for instance, electrolytic plating technique.

The material of the connection electrode 139 is capable of being formedof metals of Cu, Al, Au, Ni, W or the like or various kinds ofconductive materials such as alloy, metal silicide, polysilicon; and itis also possible to employ a multi-layered structure including adiffusion barrier of a solder or a support layer of electrode strengthin addition to a single-layer structure. As for the electrode with themulti-layered structure, it is possible to employ an electrode where Au,Ni and Cu are sequentially formed from a lower end side into amulti-layered structure (Au/Ni/Cu electrode), an electrode where Ni, Au,Ni, and Cu are sequentially formed from a lower end side intomulti-layered structure (Ni/Au/Ni/Cu electrode), an Au/Ni/CU electrodewhere Ni layer of the most lower end layer is removed from theNi/Au/Ni/Cu electrode, and an electrode where Cu, Ag and Cu aresequentially formed from a lower end side into a multi-layered structure(Cu/Ag/Cu electrode). In the above described electrodes, the Ni layer ofthe intermediate layer functions as a diffusion barrier preventingsolder from being diffused. Furthermore, in the Cu/Ag/Cu electrode, theAg layer functions as a support layer enhancing strength of theelectrode.

Next, the connection electrode 139 is embedded with the insulatingresin, upon providing the insulating resin film 141 over the whole faceof a forming face of the connection electrode 139 (FIG. 9C). Theinsulating resin film 141 is capable of being formed using, forinstance, a method for bonding an insulating resin sheet with laminatedfilm shape or a spin coat technique or the like. And then, a laser via,that is, an opening 143 is provided upon irradiating laser beam topredetermined position of the insulating resin film 141 (FIG. 10A).Further, it may be suitable to form the opening 143 depending on thephotolithography technique while using photosensitive resin for theinsulating resin film 141.

After that, the opening 143, which is embedded with predetermined metalfilm such as Cu or the like, is made to be a via plug 145 (FIG. 10B).And then, an interconnect 147, which is connected with the via plug 145,having a predetermined pattern is formed on the insulating resin film141 (FIG. 10C). The material of the interconnect 147 is set to metal,such as for instance, Cu or the like. And then, a plating layer (notshown in the drawings) composed of Au/Ni from the upper layer is formedon a face of the interconnect 147. Using the above process, themulti-layered interconnect layer 103 is formed on the silicon substrate133.

It should be noted that there is no limitation especially in planararrangement of the via plug 145, so that it is possible to appropriatelyselect in accordance with design of the semiconductor device 120. Forinstance, it is possible to arrange the via plug 145 into a tetragonallattice shape, or it is possible to arrange the via plug 145 into adiagonal lattice shape such as a staggered lattice shape or the like.

The semiconductor device 120 shown in FIG. 8 is capable of beingmanufactured using the manufacturing process of the semiconductor device110 (FIG. 7) described in the second embodiment, after manufacturing theinterconnect layer 103 on the silicon substrate 133 with the aboveprocess. Here, in the structure of the semiconductor device 110, theinterconnect component 101 has the structure having the silicon layer105, therefore, the silicon substrate 133 is made thin, however, thestructure of the semiconductor device 120 according to the presentembodiment does not have the silicon layer 105, thereby, the siliconsubstrate 133 is removed in the same case as the first embodiment, afterbonding the first semiconductor element 113. And then, the secondsemiconductor element 111 is bonded to the interconnect component 101.

In the semiconductor device 120 (FIG. 8, FIG. 10C) thus obtained, theconnection electrode 139 is provided on a side of the secondsemiconductor element 111 of the insulating resin film 141. Theconnection electrode 139 includes an element connection electrodeconnecting the second semiconductor element 111 with the firstsemiconductor element 113, and an external connection electrodeconnecting the second semiconductor element 111 with an outside. Thewhole side face of the connection electrode 139 is embedded inside theinsulating resin film 141, whenever the connection electrode 139corresponds to any of the above cases. While, the whole faces onopposite side to the insulating resin 119 of the connection electrode139 are exposed from the insulating resin film 141, resulting in thestructure where the connection electrode 139 does not come into contactwith the insulating resin film 141 at the exposed faces.

Therefore, it is possible to realize high density arrangement of theconnection electrode 139. Further, it is possible to insulate surely aside face outer periphery of the connection electrode 139. Furthermore,it is possible to insulate surely the periphery of the electrodeterminal 123, upon providing surely the electrode terminal 123 on apredetermined region, while making a face of a side of the secondsemiconductor element 111 of the interconnect layer 103 a flat face.

Moreover, when employing the connection electrode 139 as an externalconnection electrode, it is possible to realize connection with highdensity and short connecting distance, as compared to the connectionbased on the conventional wire bonding.

It should be noted that, in the semiconductor device 120, the connectionelectrode 139 may be constituted such that a plurality of conductivecomponents are bonded. Further, the exposed face of the connectionelectrode 139 from the insulating resin film 141 may not be a flat face.For instance, the exposed face of the connection electrode 139 may be acurved face projecting convexly from a face of the insulating resin film141. Furthermore, the connection electrode 139 may allow the bumpelectrode to be bonded to the exposed face from the insulating resinfilm 141.

Sufficient height to bond the connection electrode 139 to anotherconnection component is secured by making the exposed face from theinsulating resin film 141 of the connection electrode 139 a curved face.Such structure is capable of being obtained upon forming a curved faceshaped electrode on the exposed face of the connection electrode 139,for instance, using an electroless plating technique or the like.

Further, the semiconductor device 120 shown in FIG. 8 is capable ofbeing manufactured upon utilizing silicon substrate 133 with bulk state.For this reason, it is possible to connect the first semiconductorelement 113 with the second semiconductor element 111 with high densityinterconnect structure and low cost. Furthermore, the semiconductordevice 120 has simple constitution because the interconnect component101 is composed of the interconnect layer 103. Therefore, it is possibleto simplify the manufacturing process, and to reduce the manufacturingcost.

In the first semiconductor element 113 and the second semiconductorelement 111, when employing structure in which the substrate with alinear expansion coefficient to be not less than 0.5 ppm/degree C. tonot more than 5 ppm/degree C. is used, it is possible to reduce thedifference of the thermal expansion coefficient between the firstsemiconductor element the silicon substrate and between the secondsemiconductor element and the silicon substrate 133. Therefore, it ispossible to enhance the connecting reliability between the interconnectcomponent 101 and the first semiconductor element 113 as well as thesecond semiconductor element 111. Moreover, in accordance with a kind ofthe substrate of the first semiconductor element 113 and the secondsemiconductor element 111, the semiconductor device 120 may bemanufactured, while using materials with small difference of the linearexpansion coefficient as compared with the substrate of thesemiconductor elements instead of the silicon substrate 133 with bulkstate.

Moreover, the first semiconductor element 113 and the secondsemiconductor element 111 may be the elements, which have the siliconsubstrate. In this case, the effect generated by using the siliconsubstrate 133 with bulk state is exhibited remarkably. For this season,the conductive via 109 with high density, which the conductive via 109connects the first semiconductor element 113 with the secondsemiconductor element 111, is provided; and it is possible to realizeconnection between the semiconductor elements with high density.

Further, side faces of the connection electrode 139 and the via plug 145inside the interconnect layer 103 are covered with the insulating resinfilm 141, therefore, when connecting a solder bump with an end face ofthe connection electrode 139 as the electrode 115 or as the electrode117, it is possible to suppress connection defects caused by flowing ofthe solder.

Furthermore, the semiconductor device 120 has a structure in which thesemiconductor element is bonded to both faces of the interconnectcomponent 101, so that the semiconductor device 120 has a structure withhigh symmetric property. For this reason, it is possible to sufficientlysecure the connecting reliability between the second semiconductorelement 111 and the first semiconductor element 113.

Further, a face of a side of the interconnect layer 103 of the firstsemiconductor element 113 and a face of a side of the interconnect layer103 of the second semiconductor element 111 are connected with a face ofthe interconnect layer 103 approximately perpendicularly and in astraight line. Therefore, the semiconductor 120 has the structurewherein connecting distance is reduced and the stable connection issecured. It should be noted that if the connection is realized withoutthe interconnect extending in the horizontal direction in an inside ofthe interconnect component 101, it is not necessary for the connectionbetween the semiconductor elements to be completely perpendicular.Moreover, in the present embodiment, it is possible to enhance densityof the minimum interval of the conductive components provided in theperpendicular direction to a face of the interconnect component 101 tobe, for instance, not more than 50 μm (micrometer).

In the present embodiment, the semiconductor device having theinterconnect component 101 composed of the interconnect layer 103 mayhave the following structure.

FIG. 31 is a cross-sectional view schematically showing a structure ofthe semiconductor device according to the present embodiment. A basicstructure of a semiconductor device 150 shown in FIG. 31 isapproximately the same as the semiconductor device 120 shown in FIG. 8.However the semiconductor device 150 is different from the semiconductordevice 120 in that there is no conductive plug 121 extending through(penetrating) inside the insulating resin 119, and there is an electrodeterminal 123, which is provided in such a way as to come into contactwith a face of a side of the second semiconductor element 111 of theinterconnect component 101, connected with an interconnect inside theinterconnect component 101.

The semiconductor device 150, like the semiconductor device 120 shown inFIG. 8, has the flat plate shaped insulating resin film 141 and aconductive component extending through (penetrating) the insulatingresin film 141; therefore, it is possible to surely connect the firstsemiconductor element 113 with the second semiconductor element 111 inhigh density. Furthermore, the semiconductor device 150 has aconstitution where it is possible to simplify the manufacturing processin that the semiconductor device 150 is capable of being manufacturedwithout providing a process to provide the conductive plug 121 insidethe insulating resin 119.

FIGS. 32 and 33 are cross-sectional views showing structure of theinterconnect layer 103 of the semiconductor device 150 shown in FIG. 31in detail.

In the semiconductor device shown in FIG. 32, a structure is exemplifiedin which the interconnect layer 103 is formed with dual-layeredstructure composed of a layer on which a via plug 145 and a pad 175 areprovided, and a layer on which an interconnect 147 is provided. Itshould be noted that, in the layer in which the via plug 145 and the pad175 are provided, the predetermined interconnects in addition to the viaplug 145 and the pad 175 may be also formed.

In the semiconductor device shown in FIG. 32, the electrode terminal 123is connected to the interconnect 147. Further, the interconnect 147 isconnected to the predetermined via plug 145 or the pad 175.

The via plug 145 and the pad 175 are the connection electrode providedon the second semiconductor element 111 of the insulating resin film141. The via plug 145 and the pad 175 correspond to the connectionelectrode 139 in the above described FIG. 10C. The whole side faces ofthe connection electrodes thereof are embedded inside the insulatingresin film 141, and the whole faces on opposite side to the insulatingresin 119 of the connection electrode are exposed from the insulatingresin film 141; in this face, the connection electrode has the structurewhere the connection electrode does not come into contact with theinsulating resin film 141. Therefore, it is possible to selectivelyprovide the electrode terminal 123 on a predetermined region, whilemaking the interconnect layer 103 a flat face.

It should be noted that, in the semiconductor device shown in FIG. 32,the via plug 145 is an element connection electrode connecting with thesecond semiconductor element 111; and the pad 175 is an externallead-out pad connecting with the electrode terminal 123, that is, anexternal connection electrode.

The interconnect 147 is provided on a connection face of the firstsemiconductor element 113 of the insulating resin film 141. A side faceof the interconnect 147 and a face of a side of the insulating resin 119are not embedded in the insulating resin film 141, so that the faces areexposed from the insulating resin film 141. Further, the exposed portionis embedded inside the insulating resin 119. Thereby, strength of theinterconnect layer 103 is sufficiently secured.

It should be noted that, in the semiconductor device shown in FIG. 32,the first semiconductor element 113 may be employed as a memory chip,and the second semiconductor element 111 may be employed as a logicchip. At this time, as the electrode 115 in FIG. 31, it is possible toprovide an electrode for connecting to memory 179 connecting the secondsemiconductor element 111 with the first semiconductor element 113, andan external input/output electrode 183 connecting the secondsemiconductor element 111 with the electrode terminal 123. Further, asthe electrode 117 in FIG. 31, it is possible to provide a memoryelectrode 181 connecting the first semiconductor element 113 with thesecond semiconductor element 111.

Furthermore, a basic structure of the semiconductor device shown in FIG.33 is approximately the same as that shown in FIG. 32, however, thesemiconductor device shown in FIG. 33 is different from thesemiconductor device shown in FIG. 32 in that the via plug 145 and thepad 175 are provided on different layers each. For this reason, theinterconnect layer 103 in which a layer of a pad 175, that is, a layerof the connection electrode 139, a layer of the via plug 145 and a layerof the interconnect 147 are sequentially formed into a three-layeredstructure, so that the number of layer of which is larger than that ofFIG. 32 by one layer. In this structure, a layer having the connectionelectrode 139 is a layer of the connection electrode in which one faceis exposed from the insulating resin film 141. A part of the connectionelectrode 139 is an element connection electrode connecting to thesecond semiconductor element 111, and another part is the pad 175connecting to the electrode terminal 123.

Further, in the semiconductor device shown in FIG. 33, the secondsemiconductor element 111 may be employed as a memory chip, and thefirst semiconductor element 113 may be employed as a logic chip. At thistime, contrary to the example of the semiconductor device structureshown in FIG. 32, it is possible to provide a memory electrode 181 asthe electrode 115 of FIG. 31, and an electrode for connecting to memory179 and an external input/output electrode 183 as the electrode 117 ofFIG. 31.

It should be noted that, in the semiconductor device 150 shown in FIG.31, structure and the number of layer of the interconnect layer 103 arenot limited to an embodiment shown in FIGS. 32 and 33, and it ispossible to set the structure and the number of layer of theinterconnect layer 103 appropriately in accordance with the structure ofthe semiconductor device. In addition, the interconnect layer 103 in thesemiconductor device shown in FIGS. 32 and 33 is capable of beingmanufactured, for instance, using a method later described in theseventh embodiment.

Further, the semiconductor device according to the present embodiment iscapable of being used in such a way that the semiconductor device isconnected with another semiconductor device to be formed with themulti-layered structure. FIGS. 34 and 35 are cross-sectional viewsschematically showing structure of such semiconductor devices.

FIG. 34 is a view showing structure in which the semiconductor device120 shown in FIG. 8 is connected with another semiconductor device 185.The semiconductor device 120 is connected with the semiconductor device185 through an electrode terminal provided on the semiconductor device185 and the conductive plug 121 provided on the semiconductor device120.

Further, FIG. 35 is a view showing structure in which the semiconductordevice 150 shown in FIG. 31 is connected with another semiconductordevice 187. The semiconductor device 150 is connected with thesemiconductor device 187 through an electrode terminal 123 provided onthe semiconductor device 150 and the conductive plug provided on thesemiconductor device 187.

It should be noted that, in the present embodiment, the structure of theinterconnect component 101 composed of the interconnect layer 103 may beemployed as the structure later described in the seventh embodiment.Furthermore, it is also possible to apply the structure of the presentembodiment to the semiconductor device described in the seventhembodiment.

Fourth Embodiment

In the semiconductor device 100 described in the first embodiment, thefirst semiconductor element 113 bonded to a side of the interconnectlayer 103 of the interconnect component 101 may be a multi-layeredcomponent composed of a plurality of semiconductor elements. FIG. 11 isa cross-sectional view schematically showing structure of thesemiconductor device according to the present embodiment. A basicstructure of the semiconductor device shown in FIG. 11 is approximatelythe same as the semiconductor device 100 (FIG. 1) described in the firstembodiment, however, the semiconductor device shown in FIG. 11 isdifferent from the semiconductor device 100 in that a plurality ofsemiconductor elements 149 are formed with the multi-layered structure,which is formed along a normal line of a face, instead of the firstsemiconductor element 113.

In the semiconductor device shown in FIG. 11, a plurality ofsemiconductor elements 149 are formed into the multi-layered structureaccording to constitution by providing repeatedly the underfill resin127, the semiconductor element 149, the underfill resin 127, thesemiconductor element 149, . . . , the underfill resin 127, thesemiconductor element 149 on a face of the interconnect layer 103 of theinterconnect component 101. The conductive plug 151 extending through(penetrating) the semiconductor element 149 is provided on therespective semiconductor elements 149. Further, an electrode 117connecting two adjacent semiconductor elements 149 therebetween isprovided on the respective underfill resins 127.

The semiconductor device shown in FIG. 11 has the structure where aplurality of multi-layered semiconductor elements 149 are connected witha side of a forming face of the insulating resin 119; and electricalconnection is realized between the multi-layered semiconductor elements149 through the conductive plug 151 penetrating the semiconductorelements 149. Specifically, the plurality of semiconductor elements 149are electrically connected with the interconnect component 101 accordingto repetition structure of the electrode 117 and the conductive plug 151composed of the electrode 117 connecting to the interconnect layer 103,the conductive plug 151, the electrode 117, the conductive plug 151, . .. , the electrode 117. The repetition structure of the electrode 117 andthe conductive plug 151 is formed in the direction of the normal line toa face of the interconnect component 101 on an approximate straightline. Thereby, the semiconductor device shown in FIG. 11 has thestructure excellent in connecting reliability in that connectingdistance between the semiconductor elements 149 is short.

Further, in the semiconductor device shown in FIG. 11, the multi-layeredcomponent of the semiconductor elements 149 is arranged on a side of theinterconnect layer 103; however, the second semiconductor element 111connected with a face of a side of the insulating film 107 of theinterconnect component 101 may have the multi-layered structure composedof the plurality of semiconductor elements. FIG. 12 is a cross-sectionalview schematically showing structure of such semiconductor element. Abasic structure of the semiconductor device shown in FIG. 12 isapproximately the same as the semiconductor device 100 (FIG. 1)described in the first embodiment; however, the semiconductor deviceshown in FIG. 12 is different from the semiconductor device 100 in thatthe plurality of semiconductor elements 149 are formed into themulti-layered structure formed along the normal line of a face insteadof the second semiconductor element 111.

In the semiconductor device shown in FIG. 12, a plurality ofsemiconductor elements 149 are formed into the multi-layered structureaccording to constitution by providing repeatedly the underfill resin125, the semiconductor element 149, the underfill resin 125, thesemiconductor element 149, . . . , the underfill resin 125, thesemiconductor element 149 on a face of the insulating film 107 of theinterconnect component 101. The conductive plug 151 penetrating thesemiconductor element 149 is provided on the respective semiconductorelements 149. Further, the electrode 115 connecting adjacent twosemiconductor elements 149 is provided on the respective underfillresins 125.

Furthermore, the plurality of semiconductor elements 149 areelectrically connected with the interconnect component 101 according torepetition structure of the electrode 115 and the conductive plug 151composed of the electrode 115 connecting to the insulating film 107, theconductive plug 151, the electrode 115, the conductive plug 151, . . . ,the electrode 115. The repetition structure of the electrode 115 and theconductive plug 151 is formed in the direction of the normal line to aface of the interconnect component 101 on an approximate straight line.Therefore, the semiconductor device shown in FIG. 12, like the case ofthe semiconductor element shown in FIG. 11, has the structure excellentin connecting reliability in that connecting distance between thesemiconductor elements 149 is short.

It should be noted that the structure in which the first semiconductorelement 113 or the second semiconductor element 111 is composed of themulti-layered component of the plurality of semiconductor elements 149,is also capable of being applied to the structure of the interconnectcomponent 101 described in the second embodiment and third embodiment.

Further, in the present embodiment and the semiconductor device ofanother embodiment having the multi-layered semiconductor elements 149,it is possible to employ a multi-layered memory module as themulti-layered semiconductor elements 149. Thereby, it is possible toobtain suitable electrical connection to the second semiconductorelement 111 having a logic portion or the like, with increasing memorycapacity.

Fifth Embodiment

In the semiconductor devices described in the above embodiments, theplurality of semiconductor elements may have a planar arrangement on oneface of the interconnect component 101. Hereinafter, there will beexplained the case of the semiconductor device (FIG. 11) described inthe fourth embodiment as an example. FIG. 13 is a cross-sectional viewschematically showing structure of the semiconductor device according tothe present embodiment.

A basic structure of the semiconductor device shown in FIG. 13 isapproximately the same as the structure of the semiconductor deviceshown in FIG. 11 in that a plurality of multi-layered semiconductorelements 149 are connected with a side of a forming face of theinsulating resin 119 of the interconnect component 101, that is, a faceof a side of the interconnect layer 103, and an electrical connection isprovided between the multi-layered semiconductor elements 149 throughthe conductive plug 151 penetrating the semiconductor element 149 andthe electrode 117. Further, the semiconductor device shown in FIG. 13 isdifferent from the semiconductor device shown in FIG. 11 in that aplurality of second semiconductor elements 111 are arranged on a faceopposed to a forming face of the insulating resin 119 of theinterconnect component 101, that is, a face of a side of the insulatingfilm 107.

In the semiconductor device shown in FIG. 13, the semiconductor devicehas the structure where the plurality of second semiconductor elements111 are arranged on the same plane, and the plurality of secondsemiconductor elements 111 connect to the interconnect layer 103 throughthe electrode 117 and the conductive via 109. For this reason,connecting distance between the plurality of second semiconductorelements 111 and the interconnect layer 103 is made linear, and it ispossible to reduce the connecting distance thereof. Consequently, thesemiconductor device shown in FIG. 13 has the structure excellent inconnecting reliability between the plurality of second semiconductorelements 111 and the semiconductor elements 149. Moreover, it ispossible to realize the conductive via 109 formed in the silicon layer105 into high density, therefore, it is possible to surely connect thesecond semiconductor element 111 with the interconnect layer 103 withhigh density.

Sixth Embodiment

In the semiconductor devices described in the above embodiments, it ispossible to also utilize the conductive via 109 provided inside theinterconnect component 101 as a connecting component to a conductivewire. Further, the semiconductor device is capable of being realizedwith the structure wherein a plurality of semiconductor elements formedwith the multi-layered structure on a face opposed to a forming face ofthe insulating resin 119 of the interconnect component 101 by anadhesive; and at least one semiconductor element thereof is electricallyconnected with the interconnect component 101 through the wire. FIG. 14is a cross-sectional view schematically showing structure of thesemiconductor device according to the present embodiment.

A basic structure of the semiconductor device shown in FIG. 14 isapproximately the same as the semiconductor device (FIG. 6) described inthe first embodiment, however the semiconductor device shown in FIG. 14is different from the semiconductor device described in the firstembodiment in that the conductive via 109 penetrating the silicon layer105 of the interconnect component 101 and the insulating film 107 arealso provided on a region where the first semiconductor element 113 andthe second semiconductor element 111 are not provided.

Further, in the semiconductor device shown in FIG. 14, the plurality ofmulti-layered second semiconductor elements 111 with an adhesive 153 areconnected with a face opposed to a forming face of the insulating resin119 of the interconnect component 101, that is, a face of a side of theinsulating film 107. The semiconductor device shown in FIG. 14 has thestructure wherein at least one second semiconductor element 111 isconnected with the conductive pad 159 formed by connecting to theconductive via 109 penetrating the silicon layer 105 and the insulatingfilm 107 of the interconnect component through the wire 155 composed ofthe conductive pad 157 and a conductor. The conductive pad 157 iscapable of being formed using, for instance, an electroless platingtechnique.

In the present embodiment, the conductive via 109 is also provided on aregion sealed with the insulating resin 119 and the insulating resin 135in addition to a bonding region of the first semiconductor element 113and the second semiconductor element 111; thereby, this conductive via109 is capable of being appropriately utilized for the wire bonding tothe second semiconductor element 111. For this reason, the semiconductordevice of the present embodiment has the structure wherein the degree offreedom in designing of electrical connection between the secondsemiconductor element 111 and the interconnect component 101 is large.

Seventh Embodiment

FIGS. 15A and 15B are cross-sectional views schematically showingstructure of the semiconductor device according to the presentembodiment. FIG. 15A is a view showing a state before bonding of thesemiconductor device shown in FIG. 15B. The semiconductor device shownin FIG. 15A has the structure wherein the first semiconductor element113 is bonded to one face of the interconnect component 101 composed ofthe interconnect layer 103 described in the third embodiment, and thesecond semiconductor element 111 is arranged on the other face thereof.The first semiconductor element 113 is embedded inside the insulatingresin 119 covering above the interconnect component 101. It should benoted that the conductive plug 121 penetrating the insulating resin 119and the electrode terminal 123 connecting to the conductive plug 121 arenot provided in FIG. 15A.

The semiconductor device shown in FIG. 15A is a semiconductor module inwhich an electrical connection is performed between the chips. Thesemiconductor device shown in FIG. 15A, as shown in FIG. 15B, is bondedon a face of a heat spreader 171 with the adhesive 153. A support ring161 and a TAB tape substrate 163 are sequentially bonded on a face ofthe heat spreader 171 in a side face of the semiconductor device. Aninterconnect layer 165 is provided on a face of the TAB tape substrate163. The interconnect layer 165 has an inner lead wire 169 whose endportion is extended toward the interconnect layer 103, and the innerlead wire 169 is sealed with an inner lead wire sealing resin 167. And,the interconnect component 101 composed of the interconnect layer 103extended out to an outside of the semiconductor device shown in FIG. 15Ais connected with the interconnect layer 165 on the TAB tape substrate163 through the inner lead wire 169 according to TAB (Tape AutomatedBonding) technique.

Thus, the semiconductor device having the interconnect layer 103 iscapable of being applied to a TAB connection type apparatus. It ispossible to further enhance the degree of freedom in designing of thesemiconductor device upon connecting the inner lead wire while using theTAB technique.

It should be noted that, in the semiconductor device according to thepresent embodiment, and another embodiment having the interconnectcomponent 101 composed of the interconnect layer 103, the structure ofthe semiconductor module in which the first semiconductor element 113and the second semiconductor element 111 are bonded to both faces of theinterconnect component 101 can be made to be the following embodiment.FIG. 16 is a cross-sectional view schematically showing structure of thesemiconductor module according to the present embodiment.

The semiconductor module shown in FIG. 16 is provided with theinterconnect component 101 having basic structure approximately the sameas the interconnect layer 103 shown in FIG. 32. A via plug 145 that isthe connection electrode and an external lead-out pad 175 are providedin the same layer. Further, a resin stopping pattern 177 is providedwith the same layer as the via plug 145 and the pad 175. The resinstopping pattern 177 is capable of being formed using the same materialand the process as the via plug 145 and the pad 175.

The pad 175 is provided on the interconnect layer 103 in the side faceof a forming region of the first semiconductor element 113 and thesecond semiconductor element 111. Further, the resin stopping pattern177, in the vicinity of a forming region of the underfill resin 125 andthe underfill resin 127, is provided in the side face of the formingregion of the underfill resins.

Furthermore, the second semiconductor element 111 (logic LSI chip)connected with a face on opposite side to a forming face of theinsulating resin 119 is connected with an interconnect 147 through anexternal input/output electrode 183, a via plug 145 and the interconnect147. Moreover, the semiconductor element 111 is connected with the firstsemiconductor element 113 (memory LSI chip) in which an electrode forconnecting to memory 179 is connected with a face on opposite side ofthe interconnect layer 103 through the via plug 145, the interconnect147 and the memory electrode 181.

The semiconductor module shown in FIG. 16 is capable of beingmanufactured by using the method described in the third embodiment(FIGS. 9A to 9C, and FIGS. 10A to 10C). Further, it may be suitable tomanufacture depending on the following process. FIGS. 21A to 21C, FIGS.22A to 22C and FIG. 23 are cross-sectional views schematically showinganother manufacturing process of the semiconductor module shown in FIG.16.

Firstly, a metal seed layer 137 is formed on a face of the siliconsubstrate 133 using sputtering technique or the like (FIG. 21A). Theseed layer 137 is capable of being realized with, for instance, Cu layeror Ni layer or the like. Next, a laser via, that is, an opening 143 insuch a way that an insulating resin film 141 is provided on the wholeforming face of the seed layer 137 in the silicon substrate 133,followed by irradiating a laser beam to a predetermined position of theinsulating resin film 141 is provided (FIG. 21B).

After that, the opening 143 is embedded with a predetermined metal filmsuch as Cu or the like, to make the opening embedded with thepredetermined metal film a connection electrode such as the via plug 145or the like (FIG. 21C). It is possible to employ metals such as Cu, Ni,Au, or W or the like, or the conductive materials such as alloy or thelike as the material of the connection electrode. Further specifically,it is possible to employ four-layered structure of Cu/Ni/Au/Ni from theupper layer as the connection electrode. Furthermore, also it ispossible to employ three-layered structure of Cu/Ni/Au from the upperlayer.

And then, the interconnect 147 having a predetermined pattern is formedon the insulating resin film 141 while connecting to the connectionelectrode (FIG. 22A). The material of the interconnect 147 is set to,for instance, metals such as Cu or the like. And then, a plating layer(not shown in the drawings) composed of Au/Ni from the upper layer isformed on a face of the interconnect 147. In accordance with the aboveprocess, the interconnect layer 103 is formed on the silicon substrate133.

Next, the first semiconductor element 113 is connected with a face ofthe interconnect component 101 while using the manufacturing process ofthe semiconductor device 110 (FIG. 7) described in the secondembodiment. The memory electrode 181 of the first semiconductor element113 is connected to the interconnect 147 of the interconnect layer 103to fill the underfill resin 127 between the first semiconductor element113 and the interconnect layer 103 (FIG. 22B). And then, the insulatingresin 119 is formed on the whole face of the interconnect layer 103 tocause the first semiconductor element 113 to be mold-encapsulated (FIG.22C).

And then, the silicon substrate 133 is removed depending on a back sidegrinding or the like, followed by removing the seed layer 137 and the Nilayer using etching technique. Further, a face of the via plug 145 isexposed while grinding a portion of the insulating resin 119 (FIG. 23).And then, the second semiconductor element 111 is connected with a faceof the interconnect component 101 while facing to the firstsemiconductor element 113. Thus, the semiconductor module shown in FIG.16 can be obtained.

Moreover, FIG. 24 is a modified example of the semiconductor moduleshown in FIG. 16. A basic structure of the semiconductor module shown inFIG. 24 is approximately the same as that shown in FIG. 16, however thesemiconductor module shown in FIG. 24 is different from that shown inFIG. 16 in that the bonded faces of the second semiconductor element 111and the first semiconductor element 113 to the interconnect component101 are reversed. In this structure, it is possible to employ, forinstance, the first semiconductor element 113 as the logic LSI chip, andthe second semiconductor element 111 as the memory chip.

Further, in the present embodiment, the structure of the semiconductormodule having the interconnect component 101 composed of theinterconnect layer 103 may be the structure shown in FIG. 25 or FIG. 29.FIG. 25 and FIG. 29 are cross-sectional views schematically showingstructure of the semiconductor module according to the presentembodiment. A basic structure of the semiconductor modules shown in FIG.25 and FIG. 29 is approximately the same as the semiconductor modulesshown in FIG. 16 and FIG. 24, however, the semiconductor modules shownin FIG. 25 and FIG. 29 are different from the semiconductor modulesshown in FIG. 16 and FIG. 24 in that the interconnect layer 103 isformed into three-layered structure composed of a forming layer of theconnection electrode 139, a forming layer of the via plug 145 and aforming layer of the interconnect 147. A part of the connectionelectrode 139 is the element connection electrode, and another partthereof is the pad 175 that is the external connection electrode.

Further, in the structure shown in FIG. 25, for instance, it is possibleto employ the first semiconductor element 113 as the memory chip, andthe second semiconductor element 111 as the logic LSI chip. Furthermore,a basic structure of the semiconductor module shown in FIG. 29 isapproximately the same structure as FIG. 25; however, the semiconductormodule shown in FIG. 29 is different from that shown in FIG. 25 in thatthe bonded faces of the second semiconductor element 111 and the firstsemiconductor element 113 to the interconnect component 101 arereversed. In this structure, it is possible to employ, for instance, thefirst semiconductor element 113 as the logic LSI chip, and the secondsemiconductor element 111 as the memory chip.

The semiconductor module shown in FIG. 25 is manufactured, for instance,in such a way as a following process. FIGS. 26A to 26C, FIGS. 27A to 27Cand FIGS. 28A to 28B are cross-sectional views schematically showingmanufacturing process of the semiconductor module shown in FIG. 25.

Firstly, a metal seed layer 137 is formed on a face of the siliconsubstrate 133 while using the sputtering technique or the like (FIG.26A). Next, a resist pattern to expose an interconnect forming positionis formed on the seed layer 137, and a connection electrode 139 of apredetermined pattern is formed with the exposed portion of the seedlayer 137 as a starting point (FIG. 26B).

Next, the insulating resin film 141 is provided on the whole formingface of the connection electrode 139 to embed the connection electrode139 with the insulating resin (FIG. 26C). The insulating resin film 141is capable of being formed using, for instance, a method for bonding aninsulating resin sheet of laminated film shape, or spin coat techniqueor the like. The insulating resin film 141 is provided on the wholeforming face of the seed layer 137 in the silicon substrate 133, and thelaser via, that is, the opening 143 is provided while irradiating thelaser light on the predetermined position of the insulating resin film141 (FIG. 26C).

After that, the opening 143 is embedded with the predetermined metalfilm such as Cu or the like to make it a via plug 145 (FIG. 27A). It ispossible to employ, for instance, the metal such as Cu or the like, asthe material of the via plug 145. Further, the via plug 145 is capableof being formed using, for instance, the plating technique.

And then, the interconnect 147 having a predetermined pattern is formedon the insulating resin film 141 while connecting with the via plug 145(FIG. 27B). The material of the interconnect 147 is set to, forinstance, the metal such as Cu or the like. And then, a plating layer(not shown in the drawings) composed of Au/Ni is formed from the upperlayer on a face of the interconnect 147. The interconnect layer 103 isformed on the silicon substrate 133 using the above process.

Next, the first semiconductor element 113 is connected with a face ofthe interconnect component 101 while using the manufacturing process ofthe semiconductor device 110 (FIG. 7) described in the secondembodiment. The memory electrode 181 of the first semiconductor element113 is connected to the interconnect 147 of the interconnect layer 103;and the underfill resin 127 is filled between the first semiconductorelement 113 and the interconnect layer 103 (FIG. 27C). And then, theinsulating resin 119 is formed on the whole face of the interconnectlayer 103; and the first semiconductor element 113 is mold-encapsulated(FIG. 28A). And then, the silicon substrate 133 is removed using theback side grinding or the like, and the seed layer 137 and the Ni layerare removed using etching technique to expose a face of the via plug 145(FIG. 28B). And then, the second semiconductor element 111 is connectedwith a face of the interconnect component 101 while facing to the firstsemiconductor element 113. Thus, the semiconductor module shown in FIG.25 can be obtained.

It should be noted that such a semiconductor module is capable of beingapplied to not only the semiconductor device having the interconnectcomponent 101 composed of the interconnect layer 103, but also thesemiconductor device (FIG. 14) or the like described in, for instance,sixth embodiment.

Eighth Embodiment

FIGS. 17A and 17B are cross-sectional views schematically showingstructure of the semiconductor device according to the presentembodiment. The semiconductor device shown in FIG. 17A has a flat plateshaped interconnect component composed of the interconnect layer 103,the first semiconductor element 113 provided on a face on one side ofthe interconnect layer 103, the insulating resin 119 coating the face onone side and a side face of the first semiconductor element 113, theconductive plug 121 extending through (penetrating) the insulating resin119, and the second semiconductor element 111 provided on a face on theother side of the interconnect layer 103.

The first semiconductor element is a multi-layered component in which aplurality of semiconductor elements 149 are formed into themulti-layered structure along the perpendicular direction to a face, hasthe structure wherein the electrode 117 provided on a side, which is themost far from the interconnect component 101 in the interconnect 147, isthe same as the electrode 115 provided on a face of a side of theinterconnect layer 103 of the first semiconductor element 113 in a planview.

It should be noted that, in the present embodiment, the interconnectlayer 103 has the flat plate shaped insulating resin film 141 (not shownin FIG. 17A), and the conductive component penetrating the insulatingcomponent; and the interconnect layer 103 electrically connects theplurality of semiconductor elements 149 with the second semiconductorelement 111 through the conductive component.

The semiconductor module shown in FIG. 17A, as shown in FIG. 17B, isconnected with an interconnect substrate 173 by the conductive pad 157connecting with the interconnect and a wire 155 connecting with theconductive pad 157 in the interconnect layer 103; and the semiconductormodule and the wire 155 are sealed with an insulating resin 135.

Next, there will be explained a method for manufacturing thesemiconductor module shown in FIG. 17A. FIGS. 18A to 18C and FIGS. 19Ato 19B are cross-sectional views explaining the manufacturing process ofthe semiconductor device shown in FIGS. 17A and 17B.

Firstly, the interconnect layer 103 is formed on the silicon substrate133 shown in FIG. 18A (FIG. 18B). It is possible to employ the methoddescribed in, for instance, the third embodiment or the seventhembodiment as a method for forming the interconnect layer 103. Next, thesemiconductor element 149 formed the electrode 117 on one face inadvance is bonded to the interconnect on the interconnect layer 103. Andthen, the underfill resin 127 is filled between the semiconductorelement 149 and the electrode 117. By repeating this process, apredetermined number of semiconductor elements 149 are formed on theinterconnect layer 103 with the multi-layered structure (FIG. 18C).

Next, a face of a side where the semiconductor element 149 of theinterconnect layer 103 is formed into the multi-layered structure iscoated with the insulating resin 135. At this time, the semiconductorelement 149 is embedded inside the insulating resin 135 (FIG. 19A). Andthen, the silicon substrate 133 is removed from a back side face usingthe method of a back side grinding technique or the like (FIG. 19B). Andthen, the second semiconductor element 111 is bonded to a face of theinterconnect layer 103 exposed due to removing of the silicon substrate133. Thereby, the semiconductor module shown in FIG. 17A can beobtained.

The semiconductor device shown in FIG. 17B is capable of being obtainedin such a way that the semiconductor module obtained from the aboveprocess is bonded to a face of the interconnect substrate 173, followedby performing bonding by the wire 155 and sealing by the insulatingresin 135, and forming the electrode terminal 123 is performed.

The semiconductor device shown in FIGS. 17A and 17B has the structurewherein the second semiconductor element 111 and the semiconductorelement 149 have the conductive component, which is provided in astraight line and in the normal direction of the main face of theinterconnect component 101; and the second semiconductor element 111 isconnected with the semiconductor element 149. For this reason, it ispossible to arrange the conductive component with high density whileshortening connecting distance between the second semiconductor element111 and the semiconductor element 149. Consequently, it is possible toenhance signal processing speed between the second semiconductor element111 and the semiconductor element 149.

Further, FIGS. 20A and 20B, in the semiconductor device shown in FIGS.17A and 17B respectively, are cross-sectional views schematicallyshowing the semiconductor device having the structure wherein theinterconnect component 101 is a multi-layered component composed of theinsulating film 107, the silicon layer 105 and the interconnect layer103, and one of the first semiconductor element 113 is connected to oneface of the interconnect layer 103, instead of the multi-layeredcomponent of the semiconductor element 149.

As shown in FIG. 20B, the semiconductor device has the semiconductormodule (FIG. 20A) having the conductive pad 157 formed by connectingwith the silicon layer 105 and the conductive via 109 penetrating theinsulating film 107 on the interconnect substrate 173 through theadhesive 153. The semiconductor device has the structure wherein theconductive pad 157 is electrically connected with the interconnectsubstrate 173 using the wire 155, and the semiconductor module and thewire 155 are sealed with the insulating resin 135.

Further, FIG. 30 is a cross-sectional view showing an example in whichthe semiconductor module having the interconnect component 101 composedof the interconnect layer 103 is applied to the semiconductor deviceshown in FIG. 20B. It should be noted that, in FIG. 30, thesemiconductor device has the structure wherein the first semiconductorelement 113 is embedded with the insulating resin 119 not exposed fromthe insulating resin 119.

In the semiconductor device shown in FIG. 30, the first semiconductorelement 113 and the second semiconductor element 111 are electricallyconnected with the interconnect substrate 173 through the interconnectlayer 103, upon connecting the connection electrode 139 to theconductive pad 157 and connecting the conductive pad 157 with theinterconnect substrate 173 by the wire 155. In this structure, it ispossible to employ, for instance, Ag pasted material as the adhesive 153connecting the insulating resin 119 with the interconnect substrate 173.It should be noted that, in FIG. 30, a part of the connection electrode139 is the via plug 145.

In the semiconductor device shown in FIG. 30, the second semiconductorelement 111 is connected with the first semiconductor element 113 withshort distance and high density while connecting the interconnectcomponent 101 with the interconnect substrate 173 surely, resulting inthe structure excellent in operation characteristics.

In the description as above, there has been described the embodiment ofthe present invention with reference to the drawings, however, these arethe exemplifications of the present invention, consequently, it is alsopossible to employ various constitution in addition to the abovedescription.

For instance, in the semiconductor device described in the aboveembodiments, it is possible to use the structure of the interconnectcomponent 101 described in any one of the first embodiment to the thirdembodiment while selecting appropriately.

It is apparent that the present invention is not limited to the aboveembodiment, that modified and changed without departing from the scopeand sprit of the invention.

1. A semiconductor device comprising: an interconnect component in ashape of a flat plate, said interconnect component comprising aninterconnect layer only on one side thereof, said interconnect layerhaving an insulating component and an interconnect, a support layersupporting said interconnect layer, and a through electrode, whichextends through said support layer, connecting with said interconnectlayer; a first semiconductor element provided on said one side of saidinterconnect component, said first semiconductor element being connectedwith said interconnect layer; a resin covering an entirety of exposedportions of said one side of said interconnect component so as to coveran entirety of exposed portions of said interconnect layer, and saidresin covering an entirety of a side face of said first semiconductorelement; and a second semiconductor element provided on a face on another side of said interconnect component, wherein said firstsemiconductor element is electrically connected with said secondsemiconductor element through said interconnect component.
 2. Thesemiconductor device according to claim 1, wherein a linear expansioncoefficient of material of said support layer is not less than 0.5ppm/degree C. to not more than 5 ppm/degree C.
 3. The semiconductordevice according to claim 1, wherein said support layer is made up of atleast one kind of material chosen from the group consisting of silicon,ceramic materials and borosilicate glass.
 4. The semiconductor deviceaccording to claim 1, wherein said support layer is a silicon layerhaving an active element formed thereon.
 5. The semiconductor deviceaccording to claim 1, wherein said interconnect component has aconfiguration in which an insulating film, said support layer and saidinterconnect layer are sequentially formed and wherein said secondsemiconductor element is connected with said insulating film.
 6. Thesemiconductor device according to claim 1, wherein a through plugextends through said resin.
 7. The semiconductor device according toclaim 1, wherein said interconnect layer is a multi-layered interconnectlayer.
 8. The semiconductor device according to claim 1, wherein saidfirst semiconductor element is embedded in said resin.
 9. Thesemiconductor device according to claim 1, wherein said throughelectrode projects convexly to said face on the other side of saidinterconnect component.
 10. The semiconductor device according to claim1, wherein said through electrode is sequentially composed of aplurality of conductive components.
 11. The semiconductor deviceaccording to claim 1, wherein said resin comprises a sealing resin andan underfill resin, said underfill resin covers said first semiconductorelement on a face facing said one side and said sealing resin coverssaid side face of said first semiconductor element.
 12. Thesemiconductor device according to claim 1, wherein a face for forming acircuit of said first semiconductor element and a face for forming acircuit of said second semiconductor element face to said interconnectcomponent.
 13. The semiconductor device according to claim 1, whereinsaid support layer is free of said resin.
 14. The semiconductor deviceaccording to claim 1, wherein said support layer is made up of silicon,an insulating film is provided on the face on said other side of saidinterconnect component, said through electrode extends through saidsupport layer and said insulating film, said second semiconductorelement connects with the face on said other side of said interconnectelement through an electrode; and said through electrode and saidelectrode are connected with a face of the interconnect componentapproximately perpendicularly and in a straight line.
 15. Thesemiconductor device according to claim 1, wherein said support layer ismade up of ceramic materials or borosilicate glass, said secondsemiconductor element connects with the face on said other side of saidinterconnect element through an electrode; and said through electrodeand said electrode are connected with a face of the interconnectcomponent approximately perpendicularly and in a straight line.
 16. Asemiconductor device comprising: an interconnect component in a shape offlat plate; a first semiconductor element provided on a face on one sideof said interconnect component; a resin covering an entirety of exposedportions of said face on one side of said interconnect component and anentirety of a side face on said first semiconductor element; and asecond semiconductor element provided on a face on an other side of saidinterconnect component, wherein said interconnect component is providedwith an interconnect layer having a flat plate shaped insulatingcomponent, a conductive component extending through said insulatingcomponent and a support layer supporting said interconnect layer, saidsupport layer being free of said resin; and wherein said firstsemiconductor element is electrically connected with said secondsemiconductor element through said conductive component, and said firstsemiconductor element is connected with said interconnect layer, so thatsaid resin covers an entirety of exposed portions of said interconnectlayer.
 17. The semiconductor device according to claim 16, wherein saidconductive component includes a connection electrode provided on a faceof said insulating component, a side face of said connection electrodeis embedded inside said insulating component, and the whole of at leastone face of said connection electrode is exposed from said insulatingcomponent.
 18. The semiconductor device according to claim 16, whereinsaid conductive component includes an interconnect provided in such away as to come into contact with a face of said insulating component;and at least a part of the side face of said interconnect and the wholeof one face of said interconnect are exposed from said insulatingcomponent.
 19. The semiconductor device according to claim 16, wherein aminimum interval between said conductive components is not more than 50micrometer.
 20. The semiconductor device according to claim 16, whereina through plug extends through said resin.
 21. The semiconductor deviceaccording to claim 16, wherein said interconnect layer is amulti-layered interconnect layer.
 22. The semiconductor device accordingto claim 16, wherein said first semiconductor element is embedded insaid resin.
 23. The semiconductor device according to claim 16, whereinsaid through electrode projects convexly to said face on the other sideof said interconnect component.
 24. The semiconductor device accordingto claim 16, wherein said through electrode is sequentially composed ofa plurality of conductive components.
 25. The semiconductor deviceaccording to claim 16, wherein said first semiconductor element isthicker than said second semiconductor element.
 26. The semiconductordevice according to claim 16, wherein at least one of said first andsecond semiconductor elements is a multi-layered componentinterconnected along a plurality of semiconductor elements.
 27. Thesemiconductor device according to claim 16, wherein one of said firstand second semiconductor elements is a memory element, and the other ofsaid first and second semiconductor elements is a logic element.
 28. Thesemiconductor device according to claim 16, wherein said resin comprisesa sealing resin and an underfill resin, said underfill resin covers saidfirst semiconductor element on a face facing said one side and saidsealing resin covers said side face of said first semiconductor element.29. The semiconductor device according to claim 16, wherein a face forforming a circuit of said first semiconductor element and a face forforming a circuit of said second semiconductor element face to saidinterconnect component.
 30. A semiconductor device comprising: a planarsupport layer; a planar interconnect layer on a first side of saidplanar support layer; a through electrode extending through said supportlayer and directly contacting said interconnect layer; a firstsemiconductor element provided on said interconnect layer; a resincovering an entirety of exposed portions of a first side of saidinterconnect layer and covering an entirety of a side face of said firstsemiconductor element, said support layer being free of resin; and asecond semiconductor element provided on an opposing side of saidsupport layer, wherein said first semiconductor element is electricallyconnected to said second semiconductor element by said throughelectrode.